Basic Problems in InP Technology.

Abstract

Procedures for evaluating the thermal stability of bulk semi-insulating InP have been developed. Determination of the concentrations in semi insulating InP is a major analytical problem. Preliminary SIMS (secondary ion mass spectrometry) measurements show that significant redistribution of Fe can occur during high temperature processing. Severe degradation can occur in ion-implanted InP samples annealed with SiO2 and encapsulated at temperatures of 750 C. The use of phosphosilicate glass dramatically reduces such surface degradation. Energy dispersive X-ray analysis (EDAX) shows that the loss of P at the surface is the cause of such degradation.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1984
Accession Number
ADA143456

Entities

People

  • H. L. Dunlap
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Compound Semiconductors
  • Crystal Lattices
  • Detectors
  • Diffraction
  • Electrical Properties
  • Electron Microscopy
  • Electron Mobility
  • Field Effect Transistors
  • Heat Treatment
  • Mass Spectrometry
  • Measurement
  • Scattering
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics