Quantum Structure of Adsorbates on Semiconductor Surfaces.

Abstract

Polarization-dependent angle-resolved photoemission spectroscopy with synchrotron radiation was performed fo Ge adatom on GaAs(110) surfaced in the monolayer regime. Chemisorbed states at the gamma point in the Brillouin zone were observed about 6.8 eV below the valence band maximum. The states are attributed to chemisorption states that are precursors ot Ge/GaAs heterojunction interface states which are theoreticallY predicted. A special low temperature UHV manipulator was constructed and used to perform oxygen and Co physisorbtion experiments on GaAs(110) at about 45 K.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1983
Accession Number
ADA143465

Entities

People

  • Gerald J. Lapeyre

Organizations

  • Montana State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Films
  • Ionization
  • Low Temperature
  • Materials Science
  • Measurement
  • Photoelectric Emission
  • Radiation
  • Semiconductors
  • Spectroscopy
  • Synchrotron Radiation
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing