Impurity and Defect Characterization in Epitaxial GaAs InP and the Ternary and Quaternary Compound Semiconductors.

Abstract

Experimental techniques were developed and used for the unambiguous identification of donors in high-purity epitaxial GaAs, InP and related compounds. Magnetic fields up to 20 T and high-resolution submillimeter spectroscopy were used to distinguish the Zeeman transitions 1s 2p(m=1) of each different donor and to describe the dependence of the line shape on field intensity. Transmutation doping was used to distinguish Se and Ge donors, molecular beam epitaxy to distinguish Sn. These methods were extended to InGaAs near millimeter wavelengths. Finally, the magnetic field dependence of the spin doublet in GaAs was measured.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 1984
Accession Number
ADA143551

Entities

People

  • K. J. Button
  • M. N. Afsar

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compound Semiconductors
  • High Resolution
  • Identification
  • Intensity
  • Magnetic Fields
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Neutron Flux
  • Photoconductivity
  • Quality Control
  • Scientific Research
  • Semiconductors
  • Spectroscopy
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics