Formation of Electron-Hole Pairs in a Semiconductor by Vibrationally-Excited Molecules.
Abstract
Both one-dimensional and three-dimensional models are presented for the collision of a vibrationally-excited molecule with a semiconductor surface, where the transfer of vibrational energy leads to the formation of electron-hole pairs. The transition probability P is calculated as a function of the molecule-surface distance for real two systems, HC1 + InSb and HC1 + PbSe, as well as for some model systems with different values of parameters. While P generally increases as the distance decreases, there are some minima at intermediate distances. The overall probability is obtained as an approximate integral of P over the distance, and for thermal collisions values of a few percent are obtained. Such values are high enough for an experimental observation of electrical conductivity due to electron-hole pair formation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1984
- Accession Number
- ADA143552
Entities
People
- I. Last
- Thomas F. George
Organizations
- University of Rochester