Compound Semiconductor Characterization.

Abstract

Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Field-effect transistors have been fabricated and tested. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 08, 1984
Accession Number
ADA143601

Entities

People

  • D. C. Look
  • D. C. Walters
  • P. W. Yu
  • S. B. Nam
  • Santanu Chaudhuri

Organizations

  • Wright State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electronics Laboratories
  • Energy Bands
  • Energy Levels
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Mass Spectrometry
  • Measurement
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics