Gallium Arsenide Field-Effect Transistor Magnetic Field Studies.

Abstract

This Minigrant work followed the author's effort in the 1982 Summer Faculty Research Program at WPAFB developing a prototype GaAs FET computer model. During the Minigrant work, the computer model was developed, tested and run extensively. Development included using true GaAs velocity overshoot correctly in the model, greatly increasing model speed, evolving an improved way to handle carrier transport, studying conduction through the semi-insulating substrate, handling individual cell doping and mobility, testing the model for valid capacitance calculations, testing the model for Gunn oscillations in a diode configuration (and obtaining good results), and use of rectangular cells rather than the original square ones. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1984
Accession Number
ADA144058

Entities

People

  • M. J. Moloney

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Capacitance
  • Charge Carriers
  • Classification
  • Computers
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Magnetic Fields
  • Mobility
  • Security
  • Transistors
  • Voltage

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics