Investigation of the Effect of Annealing on the Dislocation and Sub-Grain Boundary Content of Solvent-Evaporation-Grown CdTe.

Abstract

Solvent-evaporation grown CdTe wafers have been examined using optical microscopy and etching techniques to determine the sub-grain boundary structure and density. The results indicate that the material contains sub-grains of the order of 100-300 micron in diameter, the boundaries of which are formed by polygonised dislocations in densities exceeding 100,000 per cm. Annealing for periods of more than 24 hours at temperatures above 800 deg C leads to a reduction in the subgrain boundary dislocation density and, in the best case, to complete removal of some of these boundaries. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1984
Accession Number
ADA144087

Entities

People

  • N. Troughton

Organizations

  • Royal Signals and Radar Establishment

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alcohols
  • Annealing
  • Boundaries
  • Crystals
  • Dislocations
  • Electronic Materials
  • Evaporation
  • Foreign Languages
  • Grain Boundaries
  • High Temperature
  • Hydrofluoric Acid
  • Load Cells
  • Materials
  • Methanols
  • Oxide Films
  • Photographs
  • Rocket Oxidizers

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology