Synthesis and Characterization of Superconducting Electronic Materials.
Abstract
Films of VN as thin as 5 nm have been made by nitriding V films at high temperature. Tunnel junctions have been successfully made using both oxidized and nitrided amorphous si barriers. Spin-polarized tunneling results show VN to have a small spin-orbit interaction, but larger than Al. Tunnel junctions have been successfully made on V3Ga and spin-polarized tunneling shows spin splitting up to 20 Teslas. Structure and compositional analysis of the V3Ga films has been carried out. We have successfully made high transition temperature Nb films as thin as 5 nm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1984
- Accession Number
- ADA144137
Entities
People
- P. M. Tedrow
- R. H. Meservey
- T. P. Orlando
Organizations
- Massachusetts Institute of Technology