Investigation of the MBE Growth of InSb and Novel Quantum Well Structures.

Abstract

The prime objectives of this contract are twofold: (a) the preparation and characterization of InSb/CdTe interfaces to investigate the existence of a two dimensional electron gas confined in the InSb by the interface potential; (b) the preparation and characterization of InSb films grown onto lattice-matched CdTe substrates. In this period, the reproducible preparation of high purity, high perfection CdTe films on ion-cleaned InSb substrates and on InSb buffer layers on InSb substrates has been achieved. The techniques of cross-section transmission transmission electron microscopy (XTEM), double crystal X-ray rocking curve analysis (DCRC), He(+) ion channeling, photoluminescence, far infrared magneto-absorption and C-V profiling have been used to study the CdTe film and interface properties.

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Document Details

Document Type
Technical Report
Publication Date
Apr 27, 1984
Accession Number
ADA144151

Entities

People

  • R. F. C. Farrow

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Contracts
  • Electron Gas
  • Electron Microscopy
  • Electronics
  • Electrons
  • Metal-Semiconductor Junctions
  • Microscopy
  • Photoluminescence
  • Quantum Wells
  • Semiconductor Devices
  • Solid State Electronics
  • Substrates
  • Transmission Electron Microscopy
  • Two Dimensional
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing