Solution of the Boltzmann Transport Equations for a Permeable Base Transistor.

Abstract

A description of a numerical method for solving the Boltzmann transport equations is presented. This numerical technique is applied to the case of the solution of the Boltzmann equations for a gallium arsenide permeable base transistor. Calculated results are presented for two base potentials. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 20, 1984
Accession Number
ADA144969

Entities

People

  • H. L. Grubin
  • J. P. Kreskovsky
  • R. C. Buggeln

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Classification
  • Computational Fluid Dynamics
  • Computational Science
  • Difference Equations
  • Differential Equations
  • Equations
  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • Partial Differential Equations
  • Scattering
  • Security
  • Semiconductors
  • Simulations
  • Transistors
  • Voltage

Fields of Study

  • Mathematics
  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics