Electron Traps in the GaAs Permeable Base Transistor.
Abstract
An experimental study of deep level traps in the GaAs permeable base transistor (PBT) was carried out using current deep level transient spectroscopy (DLTS). This type of measurement was used because of its ability to detect electron traps in the base region of the PBT, the region most critical to device performance. The automated measurement system was able to capture the PBT current transients and store them for later analysis. With this system, the DLTS signal could be obtained for several rate windows with one thermal scan. The results of the DLTS measurements indicated a number of different deep level traps in the devices tested. The PBT devices tested were each fabricated in slightly different ways, and the differences in the traps detected were understandable. The forward voltage pulse used to fill the deep level traps was relatively high, and hole traps were observed as well as electron traps. One hole trap which was common to three of the devices is thought to be related to the presence of copper in the GaAs around the base. Another hole trap found in one of the devices is thought to be due to iron.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1984
- Accession Number
- ADA145399
Entities
People
- J. L. Rienstra
Organizations
- Air Force Institute of Technology