The Behavior of Pb(1-x)Sn(x)Te Semiconductor Laser Diodes in a Magnetic Field.

Abstract

This thesis examines the magnetic field behavior of semiconductor laser diodes with Pb(1-x)Sn(x)Te active regions for x values of 0, .14, and .16. Most of the data was taken at temperatures less than 17 K with some data taken around 80 K. The diodes were stripe-mesa diodes with stripe widths from 16 micron to 25 micron and cavity lengths from 317 micron to 355 micron. The four diodes examined included a homojunction, a double heterostructure, a 300 quantum well and a 600 A quantum well laser diode. The frequency at zero magnetic field was plotted as a function of diode current. The average mode separations for the Pb(.84)Sn(.16)Te homojunction laser were 1.77 per cm and 11.44 per cm. For the PbTe 300 A quantum well laser at 11 K they were 4.92 per cm and 12.50 per cm.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1984
Accession Number
ADA145431

Entities

People

  • G. L. Lorenzen

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Band Structures
  • Conduction Bands
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Laser Diodes
  • Lasers
  • Magnetic Fields
  • Measurement
  • Modules (Electronics)
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots