Relationships between Electronic Structure and Stability of Metallic Glasses.

Abstract

Amorphous MgZn alloys have been obtained in the form of thin films by co-evaporation under ultra-high vacuum on cold sapphire substrates (= approx. 10K), for Zn concentrations between 25 and 35 at.%. These films crystallize at about 350K. Their d.c. electrical resistivity and their optical properties between 0.6 and 4 eV have been investigated in situ. The resistivity versus temperature behaviour is roughly similar to that reported for quenched bulk alloys but the resistivity values are significantly larger. The complex dielectric constant follows the free-electron Drude model at low energies up to 1.8 eV. The optical free electron parameters are discussed and compared to those obtained on other free-electron-like amorphous alloys. Special attention is paid to the average effective number of conduction electrons per atom, which is found to be smaller than expected. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1984
Accession Number
ADA145506

Entities

People

  • F. Abeles
  • M. L. Theye
  • V. Nguyen Van

Organizations

  • Pierre and Marie Curie University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Dielectric Permittivity
  • Diffraction
  • Electron Gas
  • Electrons
  • Energy Bands
  • Evaporation
  • Films
  • Free Electrons
  • Low Temperature
  • Materials
  • Measurement
  • Optical Properties
  • Scattering
  • Thin Films
  • Transport Properties
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene