Current Controlled LPE (Liquid Phase Epitaxy) Growth of Semiconductors.

Abstract

The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1984
Accession Number
ADA145536

Entities

People

  • A. Abul-fadl
  • E. K. Stefanakos
  • Srikanth Iyer
  • W. J. Collis

Organizations

  • North Carolina Agricultural and Technical State University

Tags

DTIC Thesaurus Topics

  • Air Force
  • Charge Carriers
  • Crystal Structure
  • Current Density
  • Diffusion Coefficient
  • Electrical Engineering
  • Epitaxial Growth
  • Equations
  • Films
  • Heat Energy
  • High Temperature
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Materials
  • Materials Laboratories
  • Optoelectronic Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene