Novel Techniques for the Fabricating and Characterization of GaAs MIS (Metal Insulator Semiconductor) Structures.

Abstract

Organometallic chemical vapor deposition (OMCVD) of Al2O3 on GaAs has been investigated as a means of fabricating metal-insulator-semiconductor field effect transistors (MISFET). Deposition at temperatures less than 400C forms high-quality films of Al2O3. Diffusion can alter the composition during high-temperature anneals. In-situ etching of the GaAs just prior to depositing the Al2O3 markedly reduced surface generation velocities, but inversion at the interface was not conclusively demonstrated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1984
Accession Number
ADA145766

Entities

People

  • B. J. Baliga
  • R. S. Ehle
  • W. G. Morris

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Chemical Vapor Deposition
  • Chemistry
  • Contracts
  • Dielectrics
  • Electron Microscopy
  • Fabrication
  • Films
  • Flow Rate
  • High Temperature
  • Mass Spectrometry
  • Materials
  • Refraction
  • Refractive Index
  • Security
  • Spectra
  • Spectrometry

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene