Studies of Grown-In Defects Versus Growth Parameters in III-V Compound Semiconductors.
Abstract
The objectives of this research are to conduct: (1) A detailed analysis of the grown-in defects and radiation induced defects in GaAs and other III-V materials grown by the LEC, VPE, LPE, and MOCVD techniques under different growth and annealing conditions, (2) Theoretical modelling of the native defects for identifying the physical origins of the deep-level traps in GaAs and other III-V materials, (3) Theoretical and experimental study of the potential well of electron traps from analyzing the electric field enhanced emission rates deduced from the nonexponential DLTS data, and (4) Study of one-MeV electron irradiation induced deep-level defects in GaAs, AlGaAs, and InP materials. The main research accomplishments are summarized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1984
- Accession Number
- ADA145864
Entities
People
- S. S. Li
Organizations
- University of Florida