A Study of Defects in Neutron Transmutation Doped Silicon: Gallium by Hall Effect Analysis

Abstract

Temperature-dependent Hall effect analysis has been used to study neutron transmutation doped, p-type silicon conventionally doped with gallium. Moderate temperature anneals of the irradiated material produced three shallow acceptor levels. The first, at 0.57 ev., was detected after prolonged anneals at 525 C and has been identified as the Ga-X level, a substitutional gallium-substitutional carbon complex. The other two levels appeared after anneals at 600 C.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1984
Accession Number
ADA146047

Entities

People

  • Richard A. Gassman
  • W. C. Mitchel

Organizations

  • Wright Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Beta Decay
  • Charge Carriers
  • Crystal Lattices
  • Crystals
  • Detection
  • Electromagnetic Fields
  • Energy Bands
  • Hall Effect
  • Infrared Detectors
  • Magnetic Fields
  • Materials
  • Measurement
  • Nuclear Reactions
  • Nuclear Reactors
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics