The Effect of Thin-Film Growth Mode on XPS/UPS/AES Intensities,

Abstract

The growth mode of thin-film deposition must be taken into account when one assesses surface electron spectroscopy data for evidence of interdiffusion of deposited and substrate material. Three models of thin-film growth are examined for their influence on signal intensity: layer-by-layer growth and two different island-growth mechanisms. Island growth, in which islands of a fixed lateral dimension first grow to a given height and then spread to cover the surface, was found to fit available UPS (ultraviolet photoelectron spectroscopy) data on the deposition of Ag on Ge. More data, such as transmission electron micrographs verifying deposit growth mode or UPS valence band changes indicating Ag-Ge interactions, must be obtained before conclusions concerning diffusion vs. island formation can be made. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 27, 1984
Accession Number
ADA146284

Entities

People

  • P. A. Bertrand

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Diffusion
  • Electron Spectroscopy
  • Electrons
  • Energy Bands
  • Experimental Data
  • Films
  • Intensity
  • Materials
  • Photoelectrons
  • Spectroscopy
  • Substrates
  • Thin Films
  • Valence Bands

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene