HgCdTe Surface and Defect Study Program.

Abstract

This interim report presents results obtained in the second six-month period of a three-year study of the interface region of HgCdTe. The effort is a collaboration of groups at Santa Barbara Research Center, Standford University, SRI International, and Hughes Research Laboratories. The technical effort is divided into tasks to study: (1) interface properties which are important to device passivation; (2) surface effects and bulk defects due to ion implantation; (3) properties including defects of the free surface and defects of the alloy itself; and (4) theoretical analysis of bonding in random substitutional alloys as well as defect formation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA146343

Entities

People

  • D. Laser
  • G. Carey
  • J. A. Silberman
  • John A. Wilson
  • V. A. Cotton

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Chemistry
  • Conduction Bands
  • Crystal Structure
  • Electrical Properties
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Ion Implantation
  • Mass Spectrometry
  • Materials Science
  • Semiconductors
  • Solid State Physics
  • Spectroscopy
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology
  • Technical Research and Report Writing.