Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

Abstract

The objective of this research was to develop low-temperature processing sequences which improved the quality of deposited oxides in the 10-50 nm thickness range appropriate to very-large-scale-integration (VLSI) technology. Low fabrication temperature is a requirement which VLSI scaling imposes on insulator technology. In the present study, all oxide processing was carried out at temperatures below that required for dry thermal oxidation of silicon.

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Document Details

Document Type
Technical Report
Publication Date
Aug 24, 1984
Accession Number
ADA146416

Entities

People

  • F. J. Feigl
  • R. H. Vogel
  • S. R. Butler

Organizations

  • Lehigh University

Tags

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Vapor Deposition
  • Dielectric Films
  • Dielectrics
  • Electrical Properties
  • Energy Bands
  • Fabrication
  • Films
  • Low Temperature
  • Measurement
  • Measuring Instruments
  • Oxide Films
  • Oxides
  • Partial Pressure
  • Semiconductor Devices
  • Silicon Dioxide
  • Very Large Scale Integration

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene