Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films.

Abstract

The effects of annealing sequence were studied on three types of silicon dioxide films fabricated at approximately 700 deg C. The oxide and interface charge characteristics of capacitors incorporating these oxides were measured. Results were compared with data from capacitors fabricated on a standard oxide film, produced by dry thermal oxidation at 1000 deg C.

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Document Details

Document Type
Technical Report
Publication Date
Aug 24, 1984
Accession Number
ADA146447

Entities

People

  • F. J. Feigl
  • S. R. Butler

Organizations

  • Lehigh University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Dielectric Films
  • Dielectrics
  • Electrical Properties
  • Fabrication
  • High Pressure
  • High Temperature
  • Low Temperature
  • Materials
  • Materials Science
  • Oxidation
  • Oxide Films
  • Oxides
  • Physical Properties
  • Semiconductor Devices
  • Silicon Dioxide
  • Very Large Scale Integration

Readers

  • Plasma Physics.
  • Thin Film Deposition Science.