Electronic Transport Processes in Refractory Metal Silicides.

Abstract

The electronic transport properties of TiSi2, TaSi2, MoSi2, and WSi2 thin films were investigated. The films were prepared by neutralized ion beam sputtering of the metals onto silicon surfaces, followed by furnace reaction in an inert atmosphere to form the disilicide film. X-ray diffraction and Auger analysis indicate that single-phase disilicide films were obtained, with no detectable impurity content. The residual and intrinsic resistivity components were determined. Hall effect and magnetoresistance measurements were made to determine the dominant carrier type and obtain representative mobility estimates. It was found that multicarrier effects prevail in all of the materials. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 22, 1984
Accession Number
ADA146495

Entities

People

  • J. E. Mahan

Organizations

  • Colorado State University

Tags

DTIC Thesaurus Topics

  • Carrier Mobility
  • Charge Carriers
  • Diffraction
  • Electrical Engineering
  • Electrons
  • Films
  • Levitons
  • Magnetic Flux Density
  • Materials
  • Mobility
  • Optical Properties
  • Refractory Metals
  • Scattering
  • Spectra
  • Thin Films
  • Transport Properties
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene