Preparation and Electronic Properties of MoS(2) and WS(2) Single Crystals Grown in the Presence of Cobalt.

Abstract

Single crystals of MoS(2) and WS(2) were grown by chemical vapor transport both in the presence and absence of cobalt. Hall measurements indicate that cobalt cannot diffuse appreciably into the bulk of MoS(2) or WS(2) and, therefore, can be present only on the surface. Similar results were obtained for as-grown crystals annealed or sulfided in contact with Co(9)S(8) or sulfided after being dipped in a 0.1M CoS0(4)/methanol solution. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 21, 1984
Accession Number
ADA146508

Entities

People

  • D. M. D'ambra
  • J. Baglio
  • J. V. Marzik
  • Kirby Dwight
  • Robert N. Kershaw

Organizations

  • Brown University

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  • Air Platforms
  • Weapons Technologies

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  • Alcohols
  • Chemical Compounds
  • Chemical Engineering
  • Chemistry
  • Engineering
  • Jet Propulsion
  • Massachusetts
  • Materials
  • Materials Science
  • Military Research
  • Molecular Orbital Theory
  • New Jersey
  • New York
  • Physics
  • Rhode Island
  • Solid State Chemistry
  • United States

Readers

  • Analytical Mechanics
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene