Millimeter-Wave Travelling-Wave Impatt Diode.

Abstract

A millimeter-wave travelling-wave IMPATT diode is studied. This device has a simple configuration and is suitable for monolithic integration. The travelling-wave structure permits oscillation of the IMPATT diode at a desired frequency without any external resonant circuit, making the whole system extremely simple. The theoretical analysis determines the condition under which gain is produced in the IMPATT device. A reasonable agreement is obtained with the experimental results.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1984
Accession Number
ADA146545

Entities

People

  • Takeki Itoh
  • Y. Fukuoka

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Cold Regions
  • Current Density
  • Differential Equations
  • Electric Fields
  • Electrical Engineering
  • Equations
  • Frequency
  • Impatt Diodes
  • Materials
  • Millimeter Waves
  • Numerical Analysis
  • P-N Junctions
  • Procedures (Computers)
  • Resonant Circuits
  • Resonant Frequency
  • Semiconductors
  • Transmission Lines

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • 5G