Research on Submicrometer Structures.
Abstract
In phase 1, the objective was to establish a submicrometer structures research lab on the MIT campus, to develop fabrication techniques for the spatial domain below 1000A, and to pursue several areas of interdisciplinary research. Research under phase 1 saw the development of an effective sub-1000A technology, successful alignment of liquid crystal films, progress in our understanding of the graphoepitaxy phenomenon, and attachment of organic molecules to submicrometer structures. In phase 2, we demonstrated surface-energy-driven secondary grain growth in Si and Ge and showed that graphoepitaxial alignment of Ge can be achieved using this grain growth process. These results indicate that if the temperature required for secondary grain growth can be driven down then graphoepitaxy should be able to form the basis of a general process for obtaining single-crystal device films, of virtually any material, on amorphous substrates. This would have significant impact on future military systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1984
- Accession Number
- ADA146578
Entities
People
- H. I. Smith
Organizations
- Massachusetts Institute of Technology