Studies of SiC Formation on Si(100) by Chemical Vapor Deposition,
Abstract
The reaction of Si(100) with C2H4 from a molecular beam source was studied using X-ray photoelectron spectroscopy, electron energy loss spectroscopy, and Auger spectroscopy. Using these methods, we studied the kinetics of SiC(Silicon Carbide) formation under conditions where no gas phase excitation processes can contribute. At Si(100) temperatures below 940 K, a 'Si + C alloy' forms on the surface; annealing to higher temperatures produces SiC exhibiting identical electron spectroscopic properties to SiC(0001). By studies of the characteristic bulk and surface plasmon loss features in the SiC thin film, it was shown that surface aggregation of bulk Si on top of the growing SiC film occurs at ' greater than or equal to 940 K. Under optimum SiC growth conditions, C2H4 yields about 0.002 SiC units per C2H4 surface collision on Si(100). This study demonstrates the unique type of information which may be obtained by using surface science methods for studies of chemical vapor deposition (CVD) processes. Originator supplied keywords include: Epitaxy, and Buffer layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1984
- Accession Number
- ADA146640
Entities
People
- F. Bozso
- J. T. Yates Jr.
- L. Muehlhoff
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh