Theoretical Investigation of Device Aspects of Semiconductor Superlattices.
Abstract
Semiconductor superlattices are synthetic crystals, which consist either of a periodic sequence of ultrahigh layers of two different semiconductors ('compositional superlatices) or of a single homogeneous semiconductor, which is periodically n- and p- doped, investigated electrical and electro-optical device applications of semiconductor superlattices in general, but with special emphasis on fast devices and oscillators for microwave generation. It is found, that an extremely wide spectrum of possibilities results from the fact that the properties of superlattices can be tailored for a given goal. Considered were two groups of device applications according to the two major classes of semiconductor superlattices: i) Devices, which rely on properties, which are in common to both classes of superlattices. The most appealing devices in this class are the far infrared radiation lasers, based on stimulated emission associated with interlayer transitions. ii) Devices, which relay on the unique features of the doping superlattices. The electronic properties of these superlattices cannot only be tailored but they can be tuned within wide limits for a given specimen. Moreover, the electron-hole recombination lifetimes exceed those of the host materials by many orders of magnitude.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1983
- Accession Number
- ADA146641
Entities
People
- G. H. Doehler