Luminescent Properties of Graded Cadmium Sulfoselenide Electrodes Prepared from Cadmium Sulfide Substrates.

Abstract

Inhomogeneous samples of n-type CdSxSe1-x (0.2 less than x less than 1) were prepared by vapor-phase diffusion of Se into a single-crystal n-CdS substrate. Characterization of the samples by Auger electron spectroscopy (AES)/Ar ion sputter etching indicates that Se substitutes for S in the lattice to produce a graded region wherein X monotonically increases with depth from approx. 0.2 at the surface to unity over a distance of approx. 1 micrometer. Photoluminescence (PL) and electroluminescence (EL) of these Cd/Se samples are dominated by edge emission characteristic of the near-surface CdSx-Se1-x compositions (approx. 650-700 nm). The narrowness of the spectra compared to spectra reported for CdSe/S graded solids prepared by diffusion of S into n-CdSe is rationalized in terms of the electronic structures of the two compounds.

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Document Details

Document Type
Technical Report
Publication Date
Sep 28, 1984
Accession Number
ADA146710

Entities

People

  • A. B. Ellis
  • M. K. Carpenter

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Compound Semiconductors
  • Electrodes
  • Electron Spectroscopy
  • Jet Propulsion
  • Light Sources
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • Photoelectrochemical Cells
  • Quantum Yields
  • Semiconductors
  • Single Crystals
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene