Crystal Growth and Characterization of BaMgF4.
Abstract
A crystal growth process employing the czochralski technique was developed. Single crystals up to 2.0cm in diameter by 7.0cm in length were grown. Laue back reflection x-ray techniques coupled with optical microscopy were used to orient crystals with respect to the crystallographic axis and optical axis. The electro-optic coefficients for BaMgF4 were measured experimental as compared to KDP. No non-zero coefficients were detected, within the sensitivity of the experiment. Analysis of the BaMgF4 structure indicates appropriate lattice sites for both divalent rare earth ions and divalent transition metal ions. The combination of substitutional sites and low growth temperature results in the potential as a laser host crystal.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1984
- Accession Number
- ADA146805
Entities
People
- T. M. Pollak