Ion Implantation and Laser Processing of III-V Compound Semiconductors with Applications to the Fabrication of Microwave Devices.
Abstract
An exploration of alternate doping sources has been carried out with a particular interest in ultra thin film techniques such as would be expected to be of significance in integrated circuit applications of GaAs. Two major studies have been conducted, one pertaining to silicon diffusion in GaAs using a rapid thermal processing cycle, and another concerned with the monolayer surface doping of GaAs that can be obtained from plated zinc sources. This report contains the results of these studies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1984
- Accession Number
- ADA146846
Entities
People
- James F. Gibbons
Organizations
- Stanford University