Laser Annealing of Ion Implanted Semiconductors.

Abstract

Contents: Raman Spectroscopy of Amorphous GaAs of Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcristallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1984
Accession Number
ADA146979

Entities

People

  • J. F. Morhange
  • M. Balkanski

Organizations

  • Pierre and Marie Curie University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electromagnetic Radiation
  • Energy Transfer
  • Frequency Shift
  • Laser Beams
  • Lasers
  • Lattice Dynamics
  • Light Scattering
  • Measurement
  • Phase Transformations
  • Raman Spectroscopy
  • Scattering
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene