Ballistic Electrons in an Inhomogeneous Submicron Structure: Thermal and Contact Effects.
Abstract
For a simple submicron semiconductor structure, we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. Large applied voltages produce a substantial ballistic peak in (f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA147069
Entities
People
- H. U. Baranger
- J. W. Wilkins
Organizations
- Cornell Laboratory of Atomic and Solid State Physics