Electron Distribution Function and Mobility in III-V Compounds for High and Low Fields.

Abstract

Electron distributions are calculated for low and high electric fields in III-V semiconductors with polar optical scattering. Approximate analytic expressions are derived by two analytic methods and compared to results found by a perturbation method and iteration method for low electric fields. Electron mobility is calculated. For high electric fields an expansion inversely in the electric field gives an approximate electron distribution function valid at low energies. A non-parabolic energy bond and p-wave scattering (they and interdependent) do not affect the asymmetrical part of the distribution function within the central valley; hence, they do not cause the negative differential resistance.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1984
Accession Number
ADA147447

Entities

People

  • B. W. Abraham-shrauner
  • S. H. Soh

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Conduction Bands
  • Difference Equations
  • Differential Equations
  • Distribution Functions
  • Electric Fields
  • Electrical Engineering
  • Electron Energy
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Engineering
  • Scattering
  • Semiconductors
  • Three Dimensional
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology
  • Space/Atmospheric Physics.

Technology Areas

  • Microelectronics