X-Ray and Backscattering Analysis of Ion Implantation Phenomena in GaAs and Related Compounds.
Abstract
This report presents an overview of a two-year study of the structure of III-V semiconductor materials with a powerful new analysis technique (kinematic modeling of double-crystal x-ray diffraction), complemented by two well-established techniques (backscattering spectrometry and transmission electron microscopy). The kinematic modeling approach to x-ray diffraction was developed at Caltech by Speriosu for studies of magnetic garnets, but clearly had great additional potential for studying the crystalline structure of semiconductors. These three techniques have been used to study ion implantation and annealing phenomena in uniform III-V semiconductors and to extend the kinematic modeling of x-ray diffraction for high precision analysis of bilayer and multilayer epitaxial III-V systems. In the latter application, this method has proven to be superior to all other known techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 04, 1984
- Accession Number
- ADA147449
Entities
People
- M. A. Nicolet
- T. Vreeland Jr.
Organizations
- California Institute of Technology