Transport Properties and Distribution Functions in III - V Semiconductors.
Abstract
Approximate analytical expressions for electron distribution functions in III-V semiconductors have been derived for high and low electric fields. For low electric fields two analytic methods were used and compared with an earlier iteration method and a new perturbation method. All gave similar distribution functions and drift mobility. For high electric fields the electron distribution function was found within the diffusion approximation by an expansion inversely in the electric field. For Al(0.25)In(0.75)As the effects of p-wave scattering and nonparabolic energy bands were not found to be the cause of the negative differential resistance. Alloy scattering in ternary semiconductors was treated in the coherent potential approximation. The validity of the diffusion and maximum anisotropy approximation has been assessed by an expansion inversely in the electric field of the polar optical collision term in high electric fields.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1984
- Accession Number
- ADA147525
Entities
People
- B. W. Abraham-shrauner
Organizations
- University of Washington