Electronic Structure, Chemical Bonding, and Electron Conductivity of Thin-Film Transition-Metal Silicides.

Abstract

The local electronic densities of states and chemical bonding of thin-film palladium and molybdenum silicides are compared on the basis of embedded cluster molecular-orbital calculations. Composite Pd(d)-Si(p)-antibonding/Si(p)-Si(p)bonding character and composite Mo(d)-Si(p)nonbonding/Mo(d)-Si(d)bonding character at the respective Fermi energies are responsible for the different electrical conductivities of these silicide films and for the different Schottky barriers of the corresponding silicide/silicon systems.

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Document Details

Document Type
Technical Report
Publication Date
Sep 10, 1984
Accession Number
ADA147721

Entities

People

  • F. A. Leon
  • Keith H. Johnson

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Composite Materials
  • Conductivity
  • Electrical Conductivity
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Engineering
  • Fermi Levels
  • Films
  • Massachusetts
  • Materials
  • Materials Science
  • Metals
  • Molecular Orbital Theory
  • Thin Films
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space