Exposure Modelling of Particle Beam Lithography,
Abstract
A flexible computer modelling system that uses a Mone Carlo method to simulate exposure of sensitive resist layer with either electrons or ions is presented. The screened Rutherford cross-section is used to calculate the angular elastic scattering of the electrons and Bethe's continuous-slowing-down approximation provides an estimate of the energy loss between scattering events. The experimentally derived universal scattering cross-section of Kalbitzer and Oetzmann is used to describe the scattering events for the incident ions and the Lindhard, Scharff and Schiott (LSS) and Bethe formulae are used to provide the electronic energy loss. The energy deposition profile generated by the computer programme for a delta-function exposure is convoluted with a realistic incident beam shape (Gaussian or modified Gaussian) to produce latent images. These latent images are then presented in the form of equi-energy contour plots or three dimensional surfaces. Also presented are plots of the simulated particle trajectories.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1984
- Accession Number
- ADA147849
Entities
People
- C. Broughton
- V. J. Mifsud
Organizations
- Royal Signals and Radar Establishment