Point Defects, Line Defects and Interfaces in Semiconductors.
Abstract
As the conference title indicates, the conference covered point defects, line defects (both precipitates and dislocations) and interfaces. The semiconductors treated included silicon and III-v compounds, although the Banquet speaker discussed optoelectronic research in Japan in its broadest aspects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADA148124
Entities
People
- P. M . Petroff
Organizations
- Gordon Research Conferences