Fluctuation Phenomena Studies in Chemically Sensitive Field Effect Transistors. Part 2. Corrosion of Silicon Oxynitride.

Abstract

Drain current fluctuations in a field effect transistor caused by the corrosion of silicon oxynitride have been measured and analyzed. It has been shown that under wet etching conditions the surface of silicon oxynitride becomes conducting. The equivalent electrical circuit corresponding to this situation has been proposed.

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 1984
Accession Number
ADA148227

Entities

People

  • J. Janata
  • J. M. Reijn
  • Z. K. Li

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemistry
  • Circuits
  • Data Processing
  • Dielectrics
  • Electrical Circuits
  • Engineering
  • Field Effect Transistors
  • Flow Rate
  • Information Science
  • Language
  • Materials
  • Military Research
  • Processing Equipment
  • Semiconductors
  • Systems Engineering
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Aerosol Science/Aerosol Physics
  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Surface Engineering/Surface Coating Technology.