Fluctuation Phenomena Studies in Chemically Sensitive Field Effect Transistor. Part 1. Corrosion of Aluminum.

Abstract

It is shown that chemically sensitive field effect transistors can be used to study stochastic processes at the solution/solid interface which is not at equilibrium. Auto spectral densities and coherence functions for corrosion of aluminum-silicon alloy at zero-net current conditions have been obtained.

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 1984
Accession Number
ADA148240

Entities

People

  • J. Janata
  • J. M. Reijn
  • Z. K. Li

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alloys
  • Aluminum
  • Amplifiers
  • Buffers (Chemistry)
  • Electrochemical Cells
  • Electrochemical Reactions
  • Electrodes
  • Field Effect Transistors
  • Frequency
  • Materials
  • Measurement
  • Military Research
  • Probability
  • Semiconductors
  • Silicon Alloys
  • Stochastic Processes
  • Time Domain

Fields of Study

  • Physics

Readers

  • Metallurgy
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology