Characterization of Thermally Treated Gallium Arsenide by Laser-Raman and Auger Spectroscopy.

Abstract

Thermally treated (100) gallium arsenide crystals were characterized by Raman and Auger spectroscopy. Studies were carried out at intervals between 200 and 750 C. It was difficult to detect any oxide films at temperatures below 450 C by Raman spectroscopy. Films grown at 450 C were homogeneous and 240A thick. Both Raman and Auger spectroscopy indicate the films consist of gallium oxide and crystalline arsenic dispersed throughout the film. A white dense film was grown at 750 C and Raman data indicated it was primarily beta gallium oxide.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1984
Accession Number
ADA148414

Entities

People

  • J. S. Solomon
  • N. T. Mcdevitt
  • W. L. Baun

Organizations

  • Wright Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electromagnetic Radiation
  • Energy Bands
  • Light Scattering
  • Materials
  • Materials Laboratories
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene