Ion Implantation in III-V Compound Semiconductors
Abstract
The goal of this program was to address the basic and applied problems associated with (a) ion implantation doping of GaAs, (b) device isolation by ion implantation in GaAs, and (c) Ohmic contact in GaAs. This report presents results of detailed investigation conducted by using various techniques. These results provide an understanding of the interactions of implanted ions with pre-implant impurities and nature of defects; the effect of various annealing procedures an activation efficiency, profile distribution, lattice incorporation, and residual damage. A clear indication of the importance of defect complexes in ion implanted GaAs has resulted from this work. Formation of high resistivity layers in n-type GaAs be oxygen implantation has been demonstrated. Systematic studies have been performed to compare surface morphologies, compound formation and diffusion behavior of Au, Au-Ge, and Au-Ge- Ni on GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1984
- Accession Number
- ADA148462
Entities
People
- A. K. Rai
- P. P. Pronko
- R. S. Bhattacharya
- Y. K. Yeo
Organizations
- Wright Laboratory