Laser Annealing of GaAs
Abstract
The results of pulsed laser annealing of ion implanted GaAs are compared with those obtained from pulse electron annealing of similar samples. Surface morphology studies indicate that the surfaces of electron beam annealed samples are generally more uniform than for laser annealing, however, above a certain threshold energy density, cracks in the GaAs are observed for electron beam annealed samples. Channeling analysis of electron beam annealed layers shows good recrystallization of amorphous GaAs and an indication that damage is introduced when the electron pulse energy density is too high. The activation of 300 keV Se ions implanted at room temperature to a dose of 1 x 10 to the 15th power/sq cm is compared for laser and E-beam annealing. Higher sheet electron concentrations were usually observed for the E-beam case. Originator-supplied keywords include: Pulsed annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1979
- Accession Number
- ADA148552
Entities
People
- F. H. Eisen
- J. L. Tandon