Optimisation of the Thermoelectric Figure of Merit in Fine Grained Semiconductor Materials Based upon Lead Telluride.

Abstract

The objective of the investigation to date has been to obtain an estimate of the possible relative improvement in material performance due to phonon-grain boundary scattering. The theoretical model employed in the calculations is relatively insensitive to the choice of value taken for parameters such as effective mass and to the nature of the energy surfaces. As indicated in the previous report the immediate task is to develop a more realistic model and work is proceeding towards this objective.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1983
Accession Number
ADA148723

Entities

People

  • C. M. Bhandari
  • D. M. Rowe

Organizations

  • University of Wales

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conductivity
  • Crystals
  • Electrical Engineering
  • Electronics
  • Engineering
  • Fermi Levels
  • Figure Of Merit
  • Grain Boundaries
  • Grain Size
  • Lead Tellurides
  • Materials
  • New York
  • Scattering
  • Semiconductors
  • Single Crystals
  • Tellurides
  • Thermal Conductivity

Readers

  • Computational Modeling and Simulation
  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics