Materials-Process Interactions in Ternary Alloy Semiconductors.

Abstract

The report describes the properties of InGaAs and the results of detailed x-ray photo-electron and electron energy loss (XPS, ELS) spectroscopies on In 0.53 Ga 0.47 As samples. The results show that in this alloy system, the native oxide consists of As2O3 and oxides involving In. Oxides involving Ga with other elements are also present.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1983
Accession Number
ADA148777

Entities

People

  • J. F. Wager Iii
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Shifts
  • Communication Systems
  • Detectors
  • Electron Energy
  • Electrons
  • Energy
  • Energy Bands
  • Kinetic Energy
  • Measurement
  • Photoelectrons
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Three Dimensional
  • Transitions
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene