Temperature-Dependent Surface States and Transitions of Si(111)-7x7.

Abstract

Ultraviolet photoemission and electron-energy-loss measurements of Si(111) - 7x7 between T = 15 and 300 K reveal significant temperature-dependent changes in the occupied surface states and their transitions which can be associated with electron-phonon coupling at the surface. Several new surface states and transitions are determined at low temperatures, including a highly localized (about 2-meV-wide), half-occupied state that resides within a 100-meV-wide surface-state band gap and determines the Fermi-level position.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1984
Accession Number
ADA149156

Entities

People

  • A. J. Schell-sorokin
  • B. N. J. Persson
  • J. E. Demuth

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Civil Engineering
  • Contracts
  • Electron Energy
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Governments
  • Low Temperature
  • Measurement
  • Military Research
  • Scattering
  • Semiconductors
  • Spectra
  • United States

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene