Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.
Abstract
The dopants of B, P, N, and Al have been added to CVD grown beta-Silicon carbide thin films during growth and via ion implantation. A thermodynamic study has also been pursued to determine the gas phases and their partial pressures in equilibrium with the SiH4, C2H4, and H2 used to deposit the Silicon carbide. Annealing studies have shown that very high temperatures (1750 C) are necessary to activate the implanted species. Oxidation studies, plasma etching, electrical property measurements and device fabrication have also been conducted. Silicon carbide is the only compound species that exists in the solid state in the Si-C system and can occur in the cubic (C), hexagonal (H) or rhombohedral (R) structures. It is also classified as existing in the beta and alpha modifications. The beta, or cubic, form crystallizes in the zincblende or sphalerite structure; whereas, a large number (approximately 140) of the alpha occur in the hexagonal or rhombohedral forms known as polytypes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1984
- Accession Number
- ADA149339
Entities
People
- H. H. Stadelmaier
- Robert F Davis
Organizations
- North Carolina State University