Use of Alternative Solvents for the Low-Temperature LPE Growth of CdTe Films.

Abstract

The use of alternative solvents, in particular Bi and In, has been investigated for the LPE growth of CdTe thin films at temperatures down to 250 C. In comparison with earlier work using Te as the solvent, this approach has several benefits: (i) improved surface topography, (ii) more complete solution removal, (iii) more abrupt interfaces, and (iv) improved electrical properties. SIMS measurements showed that the layers grown from Bi solutions contained 0.1 ppma Bi, while those grown from In solutions contained approx. 100 ppma In. Doping experiments using In, Sb, and As were performed using Bi as the solvent.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1984
Accession Number
ADA149418

Entities

People

  • D. R. Wight
  • G. Blackmore
  • M. Astles
  • N. Gordon

Organizations

  • Royal Signals and Radar Establishment

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Capacitance
  • Chemical Analysis
  • Coefficients
  • Crystal Growth
  • Crystals
  • Electrical Properties
  • Films
  • Graphitic Materials
  • Heat Treatment
  • Low Temperature
  • Mass Spectrometers
  • Mass Spectrometry
  • Materials
  • Measurement
  • Melting Point
  • Spectrometry

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology