Factors Affecting SOS (Silicon-on-Sapphire) Yield and Reliability.

Abstract

This report describes methods for characterizing the quality of silicon-on-sapphire (SOS) wafers to improve the yield and reliability of integrated circuits fabrication in this material. Epilayer stress was measured by Raman lineshift. Epilayer surface haze was quantitatively measured by ultraviolet scattering. Epilayer defect densities were studied by XTEM. MOSFET transistors were fabricated in characterized wafers and electrically tested to determine yield. Device yields were very low in very high haze wafers with epilayers to determine yield. Device yields were very low in very high haze wafers with epilayers deliberately grown at suboptimal temperatures. There is no statistically significant correlation between haze or layer stress and yield for vendor wafers or for epilayers grown at nominally optimal temperatures. Originator-supplied keywords include: Silicon-On-Sapphire; SOS characterization; Yield; Integrated Circuits; Haze; Stress; Scattering; and XTEM.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1984
Accession Number
ADA150004

Entities

People

  • P. G. Mcmullin

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Crystal Defects
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Crystals
  • Detectors
  • Diffraction
  • Geometry
  • Laser Beams
  • Measurement
  • Optical Properties
  • Orientation (Direction)
  • Scattering
  • Semiconductors
  • Standards
  • Statistical Analysis
  • Telemetry Equipment

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Polymer Science and Engineering.
  • Semiconductor Device Technology