Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

Abstract

During the second year of performance under this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb3Sn replacing V3Si as the tunnel junction high-Tc base electrode. A process of all-refractory test junction patterning by wet and/or reactive ion etching was implemented. Epitaxial, textured tunnel barrier structures of the form Al/Al2O3, Y/Y2O3, and Al/Al2O3/Al, have been fabricated. Tunnel junctions with Nbm Nb3Sn, and Mo-Re base and Pb-Bi counterelectrodes have been formed with the barrier structures and had excellent I-V characteristics. Junctions with Nb counterelectrodes exhibited high subgap leakage currents. The Mo(65)Re(35) alloy was found to be an ideal material for counterelectrodes having Tc=12K. Originator-supplied keywords include: superconductors, films, Josephson, junctions, niobium, molybdenum, A15, and XPS. (Author).

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1984
Accession Number
ADA150010

Entities

People

  • A. I. Braginski
  • J. Talvacchio
  • M. A. Janocko

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Critical Temperature
  • Crystal Structure
  • Crystals
  • Detection
  • Electrical Properties
  • Elements
  • Etching
  • Fabrication
  • Materials
  • Metals
  • Physical Properties
  • Quasiparticles
  • Reactive Ion Etching
  • Surface Properties
  • Thin Films
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene